Influence of surface topography on in situ reflection electron energy loss spectroscopy plasmon spectra of AlN, GaN, and InN semiconductors

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 29, Issue 4, 2011, Pages

  Strawbridge, B ^a   Cernetic, N ^a   Chapley, J ^a   Singh, R K ^a   Mahajan, S ^a   Newman, N ^a  

^a Arizona State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALN; FILM COMPOSITION; HIGH-ENERGY ELECTRON; IN-SITU; LOWER ENERGIES; PLASMON LOSS; REFLECTION ELECTRON ENERGY LOSS SPECTROSCOPIES; SAMPLE SURFACE; SEMI-CONDUCTOR SURFACES; SURFACE PLASMONS; SURFACE TEXTURES;

DISSOCIATION; ELECTRON EMISSION; ELECTRON ENERGY ANALYZERS; ELECTRON SCATTERING; ENERGY DISSIPATION; GALLIUM NITRIDE; HIGH ENERGY ELECTRON DIFFRACTION; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; PLASMONS; SURFACE TOPOGRAPHY; TOPOGRAPHY;

ELECTRON ENERGY LOSS SPECTROSCOPY;

EID: 79960515521     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.3584775     Document Type: Article

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