Thermal reliability of fine pitch Cu-Cu bonding with self assembled monolayer (SAM) passivation for Wafer-on-Wafer 3D-Stacking

Proceedings - Electronic Components and Technology Conference

Volumn , Issue , 2011, Pages 22-26

  Peng, L ^a,b   Li, H Y ^a   Lim, D F ^b   Gao, S ^a   Tan, C S ^b,c  

^a INSTITUTE OF MICROELECTRONICS   (Singapore)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^c RESEARCH TECHNO PLAZA   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

BONDING INTERFACES; FINE PITCH; HIGH DENSITY; HIGH THROUGHPUT; MECHANICAL AND THERMAL PROPERTIES; SCALING LIMITS; SIGNAL PROPAGATION DELAYS; THERMAL ENDURANCE; THERMAL RELIABILITY; THREE DIMENSIONAL INTEGRATED CIRCUITS;

CONTACT RESISTANCE; ELECTRIC PROPERTIES; MECHANICAL PROPERTIES; PASSIVATION; SELF ASSEMBLED MONOLAYERS; THERMODYNAMIC PROPERTIES; THREE DIMENSIONAL;

WAFER BONDING;

EID: 79960422208     PISSN: 05695503     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ECTC.2011.5898485     Document Type: Conference Paper

References (8)

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