Elucidating negative capacitance in light-emitting diodes using an advanced semiconductor device theory

Journal of Applied Physics

Volumn 109, Issue 12, 2011, Pages

  Li, Y ^a   Wang, C D ^a,b   Feng, L F ^a   Zhu, C Y ^b   Cong, H X ^c   Li, D ^d   Zhang, G Y ^b  

^a TIANJIN UNIVERSITY   (China)

^b PEKING UNIVERSITY   (China)

^c FOSHAN UNIVERSITY   (China)

^d NANKAI UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ALTERNATING CURRENT; CAPACITANCE CHARACTERISTICS; DIFFUSION CAPACITANCE; DIRECT CURRENT; FORWARD BIAS; NEGATIVE CAPACITANCE; P-N JUNCTION; SMALL SIGNAL;

CAPACITANCE; LIGHT EMISSION; SEMICONDUCTOR DIODES; SEMICONDUCTOR JUNCTIONS;

LIGHT EMITTING DIODES;

EID: 79960181821     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3597831     Document Type: Article

References (20)

1. B. F. Fan, H. Wu, Y. Zhao, Y. L. Xian, B. J. Zhang, and G. Wang, IEEE Trans. Electron Devices 55, 3375 (2008). 10.1109/TED.2008.2006534
2. P. H. Chen, C. L. Lin, Y. K. Liu, T. Y. Chuang, and C. Y. Liu, IEEE Photonics Technol. Lett. 20, 845 (2008). 10.1109/LPT.2008.921826
3. T. Noguchi, M. Kitagawa, and I. Taniguchio, Jpn. J. Appl. Phys. 19, 1423 (1980). 10.1143/JJAP.19.1423
4. J. Werner, A. F. J. Levi, R. T. Tung, M. Anzlowar, and M. Pinto, Phys. Rev. Lett. 60, 53 (1988). 10.1103/PhysRevLett.60.53
5. X. Wu, S. Yang, and H. L. Evans, J. Appl. Phys. 68, 2845 (1990). 10.1063/1.346442
6. C. H. Champness and W. R. Clark, Appl. Phys. Lett. 56, 1104 (1990). 10.1063/1.102581
7. C. D. Wang, C. Y. Zhu, G. Y. Zhang, J. Shen, and L. Li, IEEE Trans. Electron Devices 50, 1145 (2003). 10.1109/TED.2003.812480
8. L. F. Feng, J. Wang, C. Y. Zhu, H. X. Cong, Y. Cheng, and C. D. Wang, Optoelectronics Letters, 1, 124 (2005). 10.1007/BF03033684
9. J. Wang, L. F. Feng, C. Y. Zhu, H. X. Cong, Y. Cheng, and C. D. Wang, J. Optoelectron., Laser 17, 1 (2006).
10. L. F. Feng, Y. Li, C. Y. Zhu, H. X. Cong, and C. D. Wang, IEEE J. Quantum Electron. 46, 1072 (2010). 10.1109/JQE.2010.2043337
11. S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981).
12. I. Omura, W. Fichtner, and H. Ohashi, IEEE Trans. Electron Devices 46, 237 (1999). 10.1109/16.737464
13. J.-C. M'Peko, Appl. Phys. Lett. 71, 3730 (1997). 10.1063/1.120496
14. K. Hess, Advanced Theory of Semiconductor Devices (Prentice-Hall, Englewood Cliffs, NJ, 1999).
15. S. E. Laux and K. Hess, IEEE Trans. Electron Devices 46, 396 (1999). 10.1109/16.740908
16. J. M. Shah, Y. L. Li, Th. Gessmann, and E. F. Schubert, J. Appl. Phys. 94, 2627 (2003). 10.1063/1.1593218
17. L. F. Feng, D. Li, C. Y. Zhu, C. D. Wang, H. X. Cong, G. Y. Zhang, and W. M. Du, J. Appl. Phys. 102, 094511 (2007). 10.1063/1.2811869 (Pubitemid 350129057)
18. J. J. H. Van den Biesen and T. Toyabe, IEEE Trans. Comput.-Aided Des. 7, 855 (1988). 10.1109/43.3216
19. W. Shockley, Electrons Holes in Semiconductors (Van Nostrand, Princeton, NJ, 1950).
20. J. Singh, Semiconductor Devices (McGraw-Hill, New York, 1994).