A compact quantum statistical model for the ballistic nanoscale MOSFETs

Physica Status Solidi (A) Applications and Materials Science

Volumn 208, Issue 7, 2011, Pages 1726-1732

  Varpula, A ^a   Lebedeva, N ^a   Kuivalainen, P ^a  

^a AALTO UNIVERSITY   (Finland)

Author keywords

ballistic transport; Green's functions; MOSFET; quantum transport

Indexed keywords

BALLISTIC REGIME; BALLISTIC TRANSPORTS; CHANNEL CURRENTS; CURRENT EXPRESSION; FITTING PARAMETERS; IV CHARACTERISTICS; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; MOS-FET; NANO SCALE; NANOSCALE DEVICE; NANOSCALE MOSFETS; NONEQUILIBRIUM GREEN'S FUNCTION TECHNIQUE; QUANTUM STATISTICAL MODEL; QUANTUM TRANSPORT; SCATTERING PROCESS;

BALLISTICS; DIFFERENTIAL EQUATIONS; GREEN'S FUNCTION; MOSFET DEVICES; NANOSTRUCTURED MATERIALS; NANOTECHNOLOGY; QUANTUM ELECTRONICS; SCATTERING;

QUANTUM CHEMISTRY;

EID: 79960094611     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.201127032     Document Type: Article

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