Bending analysis in AlN-based multilayered piezoelectric cantilevers

Ferroelectrics

Volumn 389, Issue 1 PART 1, 2009, Pages 75-82

  Giordano, C ^a   Ingrosso, I ^a   Grande, M ^b   Qualtieri, A ^a   Pugliese, M ^a   Todaro, M T ^a   Tasco, V ^a   De Vittorio, M ^a   Passaseo, A ^a  

^a NATIONAL NANOTECHNOLOGY LABORATORY   (Italy)

^b POLITECNICO DI BARI   (Italy)

Author keywords

AlN; Bending; Cantilevers; MEMS

Indexed keywords

EID: 79960052484     PISSN: 00150193     EISSN: 15635112     Source Type: Journal    
DOI: 10.1080/00150190902987848     Document Type: Conference Paper

References (11)

1. V. Mortet, M. Nesladek, K. Haenen, A. Morel, M. D'Olieslaeger, andM. Vanecek, Physical properties of polycrystalline aluminium nitride films deposited by magnetron sputtering, Diamond and Related Materials 13, 1120-1124 (2004).
2. J. Olivares, E. Iborra, M. Clement, L. Vergara, J. Sangrador, and A. Sanz-Hervas, Piezoelectric actuation of microbridges using AlN, Sensors and Actuators A 123-124, 590-595 (2005).
3. S. Trolier-McKinstry and P. Muralt, Thin Film Piezoelectrics for MEMS, Journal of Electroceramics 12, 7-17 (2004).
4. N. Sama, R. Herdier, D. Jenkins, C. Soyer, D. Remiens, M. Detalle, and R. Bouregba, On the influence of the top and bottom electrodes-A comparative study between Pt and LNO electrodes for PZT thin films, Journal of Crystal Growth, 310, 3299-3302 (2008).
5. A. Andreia, K. Krupaa, M. Jozwika, P. Delobelleb, L. Hirsingerb, C. Goreckia, L. Nieradkoa, and C. Meunierc, AlN as an actuation material for MEMS applications. The case of AlN driven multilayered cantilevers, Sensors and Actuators A 141, 565-57 (2008).
6. E. Iborra, J. Olivares, M. Clement, L. Vergara, A. Sanz-Hervás, and J. Sangrador, Piezoelectric properties and residual stress of sputtered AlN thin films for MEMS applications, Sensors and Actuators A 115, 501-507 (2004).
7. A. Sanz-Hervas, L. Vergara, J. Olivares, E. Iborra, Y. Morilla, J. Garci a-Lopez, M. Clement, J. Sangrador, and M.A. Respaldiza, "Comparative study of c-axis AlN films sputtered on metallic surfaces, " Diam. Relat. Mater. 14(3-7), 1198-1202 (2005).
8. T. Kamohara, M. Akiyama, N. Ueno, and N. Kuwano, "Influence of molybdenum bottom electrodes on crystal growth of aluminium nitride thin film, " Journal of Crystal Growth 310, 345-350 (2008).
9. I. Ingrosso, V. Tasco, D. Altamura, M. De Vittorio and A. Passaseo, "Structural and piezoelectric properties of DC-sputtered AlN films deposited on different Si-based substrates, " submitted to Ferroelectrics.
10. M. Clement, S. González-Castilla, J. Olivares, J. Malo, J. I. Izpura, E. Iborra, and J. Sangrador, "Frequency characterization of AlN piezoelectric resonators, " Frequency Control Symposium, 2007 Joint with the 21st European Frequency and Time Forum. IEEE International, 374-377 (2007).
11. M. Ishiharaa, S.J. Li, H. Yumoto, K. Akashi, and Y. Ide, Control of preferential orientation of AlN films prepared by the reactive sputtering method, Thin Solid Films 316, 152-157 (1998).