Tunable temperature coefficient of resistivity in C- and Co-doped CuNMn3

Scripta Materialia

Volumn 65, Issue 5, 2011, Pages 452-455

  Lin, J C ^a   Wang, B S ^a   Tong, P ^a   Lin, S ^a   Lu, W J ^a   Zhu, X B ^a   Yang, Z R ^a   Song, W H ^a   Dai, J M ^a   Sun, Y P ^a,b  

^a INSTITUTE OF SOLID STATE PHYSICS   (China)

^b INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

Author keywords

Doped CuNMn3; Electrical resistivity; Electronic structure; Intermetallic compound; Zero TCR

Indexed keywords

ANTIPEROVSKITE; CO-DOPED; COMMERCIAL PROSPECT; DOPED CUNMN3; DOPING LEVELS; ELECTRICAL RESISTIVITY; ELECTRON PHONON SCATTERING; INTERMETALLIC COMPOUND; TEMPERATURE COEFFICIENT OF RESISTIVITY; ZERO TCR;

DENSITY FUNCTIONAL THEORY; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; INTERMETALLICS; MANGANESE; PHONONS; SOLDERING ALLOYS;

COBALT COMPOUNDS;

EID: 79959964871     PISSN: 13596462     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.scriptamat.2011.05.035     Document Type: Article

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