1D n-p heterojunctions of zinc oxide on gallium nitride: A structural characterization

Journal of Physical Chemistry C

Volumn 115, Issue 20, 2011, Pages 9961-9969

  Nikoobakht, Babak ^a   Bonevich, John ^a   Herzing, Andrew ^a  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPIC GROWTH; CRYSTAL GROWTH TECHNIQUES; GROWTH DIRECTIONS; GROWTH TECHNIQUES; HRTEM ANALYSIS; ISLAND FORMATION; LATERAL GROWTH; LIGHT GENERATION; LIQUID SOLIDS; NANODROPLET; NANOWALLS; PLANAR ARRAYS; RESIDUAL STRAINS; STRUCTURAL CHARACTERIZATION; STRUCTURAL QUALITIES; THREADING DISLOCATION; ZNO; ZNO NANOCRYSTAL; ZNO NANOWIRES;

CRYSTAL GROWTH; CRYSTAL STRUCTURE; DISLOCATIONS (CRYSTALS); GALLIUM NITRIDE; HIGH RESOLUTION ELECTRON MICROSCOPY; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; NANOCRYSTALS; NANOWIRES; SINGLE CRYSTALS; STACKING FAULTS; TRANSMISSION ELECTRON MICROSCOPY; ZINC OXIDE;

HETEROJUNCTIONS;

EID: 79959963647     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp201595a     Document Type: Article

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