Electronic transport characteristics in silicon nanotube field-effect transistors

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 43, Issue 9, 2011, Pages 1655-1658

  Shan, Guangcun ^a,b   Wang, Yu ^b   Huang, Wei ^a  

^a NANJING UNIVERSITY OF POSTS AND TELECOMMUNICATIONS   (China)

^b CITY UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

DEVICE APPLICATION; DRIVE CURRENTS; ELECTRONIC TRANSPORT; EXPERIMENTAL STUDIES; GATE BIAS; GATE OXIDE; HIGH-K HFO; NANO-DEVICES; NANOTUBE TRANSISTORS; NON EQUILIBRIUM; SILICON NANOTUBES; SINGLE-WALLED;

MESFET DEVICES; NANOTUBES; POISSON EQUATION;

TRANSISTORS;

EID: 79959877986     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2011.05.017     Document Type: Article

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