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Volumn 205, Issue SUPPL. 2, 2011, Pages

The effect of Ti sputter target oxidation level on reactive High Power Impulse Magnetron Sputtering process behaviour

Author keywords

High Power Impulse Magnetron Sputtering; Hysteresis; Reactive sputtering; Target oxidation

Indexed keywords

CLEAN METAL; DC SPUTTERING; HIGH POWER IMPULSE MAGNETRON SPUTTERING; HIGH-POWER; HYSTERESIS BEHAVIOUR; MAGNETRON SPUTTERING PROCESS; METAL SURFACES; OXIDATION LEVEL; PEAK VOLTAGE; PROCESSING PARAMETERS; PULSE FREQUENCIES; REACTIVE DEPOSITION; REACTIVE PROCESS; SPUTTER CLEANING; TARGET STATE; TARGET SURFACE;

EID: 79959807011     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.surfcoat.2011.02.056     Document Type: Article
Times cited : (7)

References (5)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.