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Volumn 205, Issue SUPPL. 2, 2011, Pages
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The effect of Ti sputter target oxidation level on reactive High Power Impulse Magnetron Sputtering process behaviour
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Author keywords
High Power Impulse Magnetron Sputtering; Hysteresis; Reactive sputtering; Target oxidation
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Indexed keywords
CLEAN METAL;
DC SPUTTERING;
HIGH POWER IMPULSE MAGNETRON SPUTTERING;
HIGH-POWER;
HYSTERESIS BEHAVIOUR;
MAGNETRON SPUTTERING PROCESS;
METAL SURFACES;
OXIDATION LEVEL;
PEAK VOLTAGE;
PROCESSING PARAMETERS;
PULSE FREQUENCIES;
REACTIVE DEPOSITION;
REACTIVE PROCESS;
SPUTTER CLEANING;
TARGET STATE;
TARGET SURFACE;
DC POWER TRANSMISSION;
ELECTRIC POTENTIAL;
HYSTERESIS;
MAGNETRON SPUTTERING;
TRANSITION METALS;
OXIDATION;
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EID: 79959807011
PISSN: 02578972
EISSN: None
Source Type: Journal
DOI: 10.1016/j.surfcoat.2011.02.056 Document Type: Article |
Times cited : (7)
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References (5)
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