Influence of PECVD SiOx and SiNx:H films on optical and passivation properties of antireflective porous silicon coatings for silicon solar cells

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 8, Issue 6, 2011, Pages 1893-1897

  Remache, L ^a   Mahdjoub, A ^b   Fourmond, E ^a   Dupuis, J ^a   Lemiti, M ^a  

^a UNIVERSITÉ DE LYON   (France)

^b UNIVERSITY OF OUM EL BOUAGHI   (Algeria)

Author keywords

Antireflection coating; Passivation; Photocurrent; Porous silicon; Silicon dioxide; Silicon nitride

Indexed keywords

ANTIREFLECTION COATINGS; NITRIDES; OPEN CIRCUIT VOLTAGE; PASSIVATION; PHOTOCURRENTS; REFLECTION; SILICA; SILICON NITRIDE; SILICON OXIDES; SILICON SOLAR CELLS; SOLAR CELLS;

ANTI-REFLECTIVE; MESOPOROUS SILICON; PASSIVATION PROPERTIES; PHOTOGENERATED CURRENT; SILICON COATINGS; SURFACE PASSIVATION; SURFACE REFLECTANCE; WAVELENGTH RANGES;

POROUS SILICON;

EID: 79959659779     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.201000110     Document Type: Article

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