A poly(styrene-co-methyl methacrylate)/room-temperature sputtered hafnium oxide bi-layer dielectrics as gate insulator for a low voltage organic thin-film transistors

Organic Electronics

Volumn 12, Issue 9, 2011, Pages 1527-1532

  Huang, Ting Hsiang ^a   Liu, Kou Chen ^b   Pei, Zingway ^a   Lin, Wen Kai ^a   Chang, Shu Tong ^a  

^a NATIONAL CHUNG HSING UNIVERSITY   (Taiwan)

^b CHANG GUNG UNIVERSITY   (Taiwan)

Author keywords

Gate dielectric; Hafnium oxide; Organic thin film transistor; Random copolymer

Indexed keywords

CAPACITANCE; CHEMICAL SENSORS; DIELECTRIC MATERIALS; DIELECTRIC PROPERTIES; ESTERS; FIELD EFFECT TRANSISTORS; GATE DIELECTRICS; HAFNIUM OXIDES; INTERFACE STATES; OXIDES; PHOTOTRANSISTORS; SEMICONDUCTING ORGANIC COMPOUNDS; STYRENE; TEMPERATURE; THIN FILM CIRCUITS; THIN FILMS;

CAPACITANCE VOLTAGE MEASUREMENTS; INTERFACE STATE DENSITY; METHYL METHACRYLATES; ON/OFF CURRENT RATIO; ORDERS OF MAGNITUDE; ORGANIC ELECTRONICS; ORGANIC THIN FILM TRANSISTORS; RANDOM COPOLYMER;

THIN FILM TRANSISTORS;

EID: 79959616158     PISSN: 15661199     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.orgel.2011.05.014     Document Type: Article

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