TlBr and TlBrxI1-x crystals for γ-ray detectors

Journal of Crystal Growth

Volumn 312, Issue 8, 2010, Pages 1221-1227

  Churilov, Alexei V ^a   Ciampi, Guido ^a   Kim, Hadong ^a   Higgins, William M ^a   Cirignano, Leonard J ^a   Olschner, Fred ^b   Biteman, Viktor ^a   Minchello, Mark ^a   Shah, Kanai S ^a  

^a RADIATION MONITORING DEVICES INC   (United States)

^b Cremat Inc   (United States)

Author keywords

A1. Purification; A1. Radiation; B1. Halides; B2. Semiconducting materials

Indexed keywords

A1. PURIFICATION; ATOMIC NUMBERS; B1. HALIDES; BAND GAPS; BULK CRYSTAL GROWTH; LONG TERM STABILITY; LOW MELTING POINT; MATERIAL ANALYSIS; MOBILITY-LIFETIME PRODUCTS; ORTHORHOMBIC CRYSTAL STRUCTURES; SEMICONDUCTING MATERIALS; SIMPLE CUBIC; WIDE-BAND-GAP SEMICONDUCTOR;

ATOMS; CRYSTAL IMPURITIES; CRYSTAL STRUCTURE; ENERGY GAP; GRAIN BOUNDARIES; PURIFICATION; SEMICONDUCTOR GROWTH; SEMICONDUCTOR MATERIALS;

RADIATION DETECTORS;

EID: 77949634948     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.10.055     Document Type: Article

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