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Volumn 108, Issue 5, 2010, Pages

First-principles study of native defects in TlBr: Carrier trapping, compensation, and polarization phemomenon

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER TRAPPING; ELECTRON TRAPPING; FIRST-PRINCIPLES CALCULATION; FIRST-PRINCIPLES STUDY; HIGH RESISTIVITY; LOW ENERGIES; MATERIAL PROPERTY; NATIVE DEFECT; ROOM TEMPERATURE; SCHOTTKY DEFECTS;

EID: 77956818586     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3476564     Document Type: Article
Times cited : (38)

References (24)
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    • No correction regarding the image charge interaction in the supercell approximation has been made. Thus, the calculated formation energies for charged defects may be somewhat lower than what they should be. But this problem does not affect the general conclusions of the paper
    • No correction regarding the image charge interaction in the supercell approximation has been made. Thus, the calculated formation energies for charged defects may be somewhat lower than what they should be. But this problem does not affect the general conclusions of the paper.
  • 22
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.