The atomic configurations of the a→ threading dislocation in GaN

Computational Materials Science

Volumn 24, Issue 1-2, 2002, Pages 144-147

  Bere A ^a   Chen, J ^b   Ruterana, P ^c   Serra, A ^a   Nouet, G ^c  

^a UNIVERSITAT POLITÈCNICA DE CATALUNYA   (Spain)

^b Institut Universitaire de Technologie d'Alencon   (France)

^c LABORATOIRE CRISMAT   (France)

Author keywords

Atomic structure; Edge dislocation; Empirical potential; GaN

Indexed keywords

CRYSTAL ATOMIC STRUCTURE; ELASTICITY; GALLIUM NITRIDE; HIGH RESOLUTION ELECTRON MICROSCOPY;

EDGE DISLOCATION;

DISLOCATIONS (CRYSTALS);

EID: 0036577370     PISSN: 09270256     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0927-0256(02)00180-5     Document Type: Conference Paper

References (11)