Effects of annealing temperature on the structure and surface feature of BaSi2 films grown on Si(111) substrates

Physics Procedia

Volumn 11, Issue , 2011, Pages 118-121

  Yang, Ziyi ^a,b   Hao, Zhengtong ^a,c   Xie, Quan ^a  

^a GUIZHOU UNIVERSITY   (China)

^b GUIYANG UNIVERSITY   (China)

^c MIANYANG NORMAL UNIVERSITY   (China)

Author keywords

Annealing; Film; Magnetron sputtering; Preferred orientation

Indexed keywords

ANNEALING; CRYSTAL ORIENTATION; FILMS; MAGNETRON SPUTTERING; OPTOELECTRONIC DEVICES; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SILICIDES; X RAY DIFFRACTION;

ANNEALING IN VACUUM; ANNEALING TEMPERATURES; CRYSTAL PLANES; MORPHOLOGICAL FEATURES; OPTIMUM GROWTH TEMPERATURE; PREFERRED ORIENTATIONS; SI(111) SUBSTRATE; SURFACE FEATURE;

EPITAXIAL GROWTH;

EID: 79959383098     PISSN: 18753884     EISSN: 18753892     Source Type: Conference Proceeding    
DOI: 10.1016/j.phpro.2011.01.018     Document Type: Conference Paper

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