Effects of Cu/In ratio of electrodeposited precursor on post-sulfurization process in fabricating quaternary CuIn(S,Se) 2 thin films

Applied Surface Science

Volumn 257, Issue 20, 2011, Pages 8360-8365

  Lai, Yanqing ^a   Kuang, Sanshuang ^a   Liu, Fangyang ^a   Yuan, Zhixue ^a   Zhang, Zhian ^a   Li, Yi ^a   Liu, Jun ^a   Wang, Bo ^a   Tang, Ding ^a   Li, Jie ^a   Liu, Yexiang ^a  

^a CENTRAL SOUTH UNIVERSITY   (China)

Author keywords

Copper sulfoselenide Cu (Se,S); Electrodeposition; Post sulfurization; Secondary phases

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; CORROSION; ELECTRODEPOSITION; ELECTRODES; INDIUM COMPOUNDS; IODINE COMPOUNDS; SELENIUM COMPOUNDS; THIN FILMS; X RAY DIFFRACTION;

CU-RICH FILMS; CUIN(S ,SE)2; CUINSE2; GRAZING INCIDENCE X-RAY DIFFRACTION; MICRO RAMAN SPECTROSCOPY; POST-SULFURIZATION; SECONDARY PHASIS; STRONG DEPENDENCES;

COPPER COMPOUNDS;

EID: 79959333660     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2011.04.021     Document Type: Article

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