SCOPUS 정보 검색 플랫폼

Volumn 98, Issue 23, 2011, Pages

Band alignment between GeTe and SiO2 /metals for characterization of junctions in nonvolatile resistance change elements

(7) Chua, E K a,b Shi, L P a Li, M H a Zhao, R a Chong, T C a,c Schlesinger, T E b Bain, J A b

a DATA STORAGE INSTITUTE (Singapore)

b CARNEGIE MELLON UNIVERSITY (United States)

c SINGAPORE UNIVERSITY OF TECHNOLOGY AND DESIGN (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS STATE; BAND ALIGNMENTS; BAND DIAGRAMS; CHARGE NEUTRALITY LEVEL; CRYSTALLINE STATE; FERMI LEVEL PINNING; HOLE BARRIER; NON-VOLATILE; RESISTANCE CHANGE;

ALIGNMENT; CRYSTALLINE MATERIALS; ELECTRON AFFINITY; ELECTRON MOBILITY; PHOTOELECTRON SPECTROSCOPY; SILICON COMPOUNDS; TUNGSTEN; X RAY PHOTOELECTRON SPECTROSCOPY;

AMORPHOUS MATERIALS;

EID: 79959331899 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3599057 Document Type: Article

Times cited : (16)

References (16)

1
- 36049053305
- 0031-9007, 10.1103/PhysRevLett.21.1450
- S. R. Ovshinsky, Phys. Rev. Lett. 0031-9007 21, 1450 (1968). 10.1103/PhysRevLett.21.1450
- (1968) Phys. Rev. Lett. , vol.21 , pp. 1450
- Ovshinsky, S.R.¹

2
- 0035717521
- 0163-1918.
- S. Lai and T. Lowrey, Tech. Dig.-Int. Electron Devices Meet. 0163-1918 2001, 803.
- Tech. Dig. - Int. Electron Devices Meet. , vol.2001 , pp. 803
- Lai, S.¹ Lowrey, T.²

3
- 19744378101
- 0883-7694.
- S. Hudgens and B. Johnson, MRS Bull. 0883-7694 29, 829 (2004).
- (2004) MRS Bull. , vol.29 , pp. 829
- Hudgens, S.¹ Johnson, B.²

4
- 35748985544
- Phase-change materials for rewriteable data storage
- DOI 10.1038/nmat2009, PII NMAT2009
- M. Wuttig and N. Yamada, Nature Mater. 1476-1122 6, 824 (2007). 10.1038/nmat2009 (Pubitemid 350050578)
- (2007) Nature Materials , vol.6 , Issue.11 , pp. 824-832
- Wuttig, M.¹ Yamada, N.²

5
- 73349100994
- 0018-9383, 10.1109/TED.2009.2035533
- H. Lo, E. Chua, J. C. Huang, C. C. Tan, C. Wen, R. Zhao, L. Shi, T. C. Chong, J. Paramesh, T. E. Schlesinger, and J. A. Bain, IEEE Trans. Electron Devices 0018-9383 57, 312 (2009). 10.1109/TED.2009.2035533
- (2009) IEEE Trans. Electron Devices , vol.57 , pp. 312
- Lo, H.¹ Chua, E.² Huang, J.C.³ Tan, C.C.⁴ Wen, C.⁵ Zhao, R.⁶ Shi, L.⁷ Chong, T.C.⁸ Paramesh, J.⁹ Schlesinger, T.E.¹⁰ Bain, J.A.¹¹

6
- 79959363068
- 0163-1918.
- C. -Y. Wen, E. K. Chua, R. Zhao, T. C. Chong, J. A. Bain, T. E. Schlesinger, L. T. Pileggi, and J. Paramesh, Tech. Dig.-Int. Electron Devices Meet. 0163-1918 2010, 237.
- Tech. Dig. - Int. Electron Devices Meet. , vol.2010 , pp. 237
- Wen, C.-Y.¹ Chua, E.K.² Zhao, R.³ Chong, T.C.⁴ Bain, J.A.⁵ Schlesinger, T.E.⁶ Pileggi, L.T.⁷ Paramesh, J.⁸

7
- 78649259728
- 0003-6951, 10.1063/1.3508954
- E. K. Chua, L. P. Shi, R. Zhao, K. G. Lim, T. C. Chong, T. E. Schlesinger, and J. A. Bain, Appl. Phys. Lett. 0003-6951 97, 183506 (2010). 10.1063/1.3508954
- (2010) Appl. Phys. Lett. , vol.97 , pp. 183506
- Chua, E.K.¹ Shi, L.P.² Zhao, R.³ Lim, K.G.⁴ Chong, T.C.⁵ Schlesinger, T.E.⁶ Bain, J.A.⁷

8
- 33646198048
- 0031-9007, 10.1103/PhysRevLett.44.1620
- E. A. Kraut, R. W. Grant, J. R. Waldrop, and S. P. Kowalczyk, Phys. Rev. Lett. 0031-9007 44, 1620 (1980). 10.1103/PhysRevLett.44.1620
- (1980) Phys. Rev. Lett. , vol.44 , pp. 1620
- Kraut, E.A.¹ Grant, R.W.² Waldrop, J.R.³ Kowalczyk, S.P.⁴

9
- 38549149235
- Band alignment between amorphous Ge2 Sb2 Te5 and prevalent complementary-metal-oxide-semiconductor materials
- DOI 10.1063/1.2837189
- L. W.-W. Fang, J. -S. Pan, R. Zhao, L. P. Shi, T. C. Chong, G. Samudra, and Y. -C. Yeo, Appl. Phys. Lett. 0003-6951 92, 032107 (2008). 10.1063/1.2837189 (Pubitemid 351160614)
- (2008) Applied Physics Letters , vol.92 , Issue.3 , pp. 032107
- Fang, L.W.-W.¹ Pan, J.-S.² Zhao, R.³ Shi, L.⁴ Chong, T.-C.⁵ Samudra, G.⁶ Yeo, Y.-C.⁷

10
- 60449100840
- 0003-6951, 10.1063/1.3079396
- L. W.-W. Fang, Z. Zhang, J. -S. Pan, R. Zhao, M. H. Li, L. P. Shi, T. C. Chong, and Y. -C. Yeo, Appl. Phys. Lett. 0003-6951 94, 062101 (2009). 10.1063/1.3079396
- (2009) Appl. Phys. Lett. , vol.94 , pp. 062101
- Fang, L.W.-W.¹ Zhang, Z.² Pan, J.-S.³ Zhao, R.⁴ Li, M.H.⁵ Shi, L.P.⁶ Chong, T.C.⁷ Yeo, Y.-C.⁸

11
- 70449727962
- 0003-6951, 10.1063/1.3263953
- L. W.-W. Fang, R. Zhao, J. -S. Pan, Z. Zhang, L. P. Shi, T. C. Chong, and Y. -C. Yeo, Appl. Phys. Lett. 0003-6951 95, 192109 (2009). 10.1063/1.3263953
- (2009) Appl. Phys. Lett. , vol.95 , pp. 192109
- Fang, L.W.-W.¹ Zhao, R.² Pan, J.-S.³ Zhang, Z.⁴ Shi, L.P.⁵ Chong, T.C.⁶ Yeo, Y.-C.⁷

12
- 68249102787
- 0003-6951, 10.1063/1.3191670
- G. Bruns, P. Merkelbach, C. Schlockermann, M. Salinga, M. Wuttig, T. D. Happ, J. B. Philipp, and M. Kund, Appl. Phys. Lett. 0003-6951 95, 043108 (2009). 10.1063/1.3191670
- (2009) Appl. Phys. Lett. , vol.95 , pp. 043108
- Bruns, G.¹ Merkelbach, P.² Schlockermann, C.³ Salinga, M.⁴ Wuttig, M.⁵ Happ, T.D.⁶ Philipp, J.B.⁷ Kund, M.⁸

13
- 0001510455
- 0021-8979, 10.1063/1.1659189
- S. K. Bahl and K. L. Chopra, J. Appl. Phys. 0021-8979 41, 2196 (1970). 10.1063/1.1659189
- (1970) J. Appl. Phys. , vol.41 , pp. 2196
- Bahl, S.K.¹ Chopra, K.L.²

14
- 0034187380
- 1071-1023, 10.1116/1.591472
- J. Robertson, J. Vac. Sci. Technol. B 1071-1023 18, 1785 (2000). 10.1116/1.591472
- (2000) J. Vac. Sci. Technol. B , vol.18 , pp. 1785
- Robertson, J.¹

15
- 0004132773
- in, edited by J. Tauc (Plenum, New York), Vol..
- J. Tauc, in Amorphous and Liquid Semiconductors, edited by, J. Tauc, (Plenum, New York, 1974), Vol. 159.
- (1974) Amorphous and Liquid Semiconductors , vol.159
- Tauc, J.¹

16
- 84985574466
- 0031-8957, 10.1002/pssb.19660150224
- J. Tauc, R. Grigorovici, and A. Vancu, Phys. Status Solidi 0031-8957 15, 627 (1966). 10.1002/pssb.19660150224
- (1966) Phys. Status Solidi , vol.15 , pp. 627
- Tauc, J.¹ Grigorovici, R.² Vancu, A.³

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.