Interface effect on Mn-containing self-formed barrier formation with extreme low-K dielectric integration

2010 IEEE International Interconnect Technology Conference, IITC 2010

Volumn , Issue , 2010, Pages

  Pan, S C ^a   Chi, C C ^a   Ko, C C ^a   Kuo, H H ^a   Huang, F M ^a   Lee, S C ^a   Lin, M H ^a   Huang, H Y ^a   Hsieh, C H ^a   Jeng, S M ^a   Tao, H J ^a   Cao, Min ^a   Mii, Y J ^a  

^a TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER FORMATION; CARBON CONTENT; DIELECTRIC LINERS; DIELECTRIC RELIABILITY; DUAL-DAMASCENE STRUCTURES; FORMATION MECHANISM; INTERCONNECT INTEGRATION; INTERFACE EFFECT; K-VALUES; LOW K DIELECTRICS; PATTERNING APPROACHES; PROPERTY REQUIREMENTS; RC DELAY;

CORROSION RESISTANCE; MANGANESE; MANGANESE COMPOUNDS;

DIELECTRIC MATERIALS;

EID: 77955643173     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IITC.2010.5510579     Document Type: Conference Paper

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