High reliability 32 nm Cu/ULK BEOL based on PVD CuMn seed, and its extendibility

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2010, Pages

  Nogami, T ^a   Bolom, T ^a   Simon, A ^a   Kim, B Y ^a   Hu, C K ^b   Tsumura, K ^a   Madan, A ^a   Baumann, F ^a   Wang, Y ^a   Flaitz, P ^a   Parks, C ^a   DeHaven, P ^a   Davis, R ^a   Zaitz, M ^a   St Lawrence, B ^a   Murphy, R ^a   Tai, L ^a   Molis, S ^a   Rhee, S H ^a   Usui, T ^a   Cabral Jr , C ^b   Maniscalco, J ^a   Clevenger, L ^a   Li, B ^a   Christiansen, C ^a   Chen, F ^a   Lee, T ^a   Schmatz, J ^a   Shobha, H ^a   Ito, F ^a   Ryan, T ^a   Nguyen, S ^a   Canaperi, D ^a   Arnold, J ^a   Choi, S ^a   Cohen, S ^b   Liniger, E ^b   Chen, H C ^a   Chen, S T ^a   Vo, T ^a   Kelly, J ^a   Straten, O ^a   Penny, C ^a   Bonilla, G ^b   Kozlowski, P ^a   Spooner, T ^a   Edelstein, D ^b   more..

^a IBM   (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CU LINES; HIGH RELIABILITY; LINER MATERIAL; RELIABILITY METHODS; SEED LAYER; TAN BARRIERS; ULTRA-THIN;

ELECTRON DEVICES; RUTHENIUM ALLOYS; TANTALUM COMPOUNDS;

RELIABILITY;

EID: 79951826959     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2010.5703471     Document Type: Conference Paper

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