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Volumn 83, Issue 5, 2011, Pages

Physical limitations to efficient high-speed spin-torque switching in magnetic tunnel junctions

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[No Author keywords available]

Indexed keywords


EID: 79960977998     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.83.054430     Document Type: Article
Times cited : (27)

References (26)
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    • 0 in the simulations was determined by extrapolating switching currents to T= 0 K and infinite switching time.
    • 0 in the simulations was determined by extrapolating switching currents to T = 0 K and infinite switching time.
  • 10
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    • Spin-transfer torque switching in magnetic tunnel junctions and spin-transfer torque random access memory
    • DOI 10.1088/0953-8984/19/16/165209, PII S0953898407278385
    • L. Z. Diao, Z. S. Wang, Y. Ding, A. Panchula, E. Chen, L.-C. Wang, and Y. Huai, J. Phys. Condens. Matter JCOMEL 0953-8984 10.1088/0953-8984/19/16/165209 19, 5209 (2007). (Pubitemid 46595090)
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    • B is Boltzmanns constant, and T is the device temperature.
    • B is Boltzmanns constant, and T is the device temperature.
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    • The details of the experimental setup will be published elsewhere. The pulse rise time was 100 ps.
    • The details of the experimental setup will be published elsewhere. The pulse rise time was 100 ps.
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    • Wafers with starting thin film stack were prepared by Singulus Technologies Inc
    • Wafers with starting thin film stack were prepared by Singulus Technologies Inc, [http://www.singulus.de/en.html]. The ion milling was stopped at the MgO barrier, meaning that only the free ferromagnetic layer is patterned. Wafer level current-in-plane-tunneling (CIPT) measurements and measurements on processed devices give resistance-area (RA) products of 3 Ω μ m 2 and tunneling magnetoresistance (TMR) ratios of about 60 %. The devices have elliptical shapes with an aspect ratio of 3 to 1 and sizes ranging from 50 × 150 nm to 80 × 240 nm. For the device with Δ = 42, the average resistance is R 510 Ω. Devices from other wafers with RA products ranging up to 25 Ω μ m 2, with various sizes, compositions, and thermal stability factors also are in agreement with the conclusions presented here.
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    • All simulations start after a 10-ns wait time to allow the system to reach the equilibrium. Pulse rise and fall times are 100 ps.
    • All simulations start after a 10-ns wait time to allow the system to reach the equilibrium. Pulse rise and fall times are 100 ps.
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    • Devolder, T.1    Chappert, C.2    Ito, K.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.