New category of ultra-thin notchless 6T SRAM cell layout topologies for sub-22nm

Proceedings of the 12th International Symposium on Quality Electronic Design, ISQED 2011

Volumn , Issue , 2011, Pages 425-430

  Mann, Randy W ^a   Calhoun, Benton H ^a  

^a University of Virginia   (United States)

Author keywords

6T bit cell; manufacturability; SNM; SRAM; technology scaling; variation; Write Margin; yield

Indexed keywords

BIT CELL; MANUFACTURABILITY; SNM; TECHNOLOGY SCALING; VARIATION; WRITE MARGIN; YIELD;

CMOS INTEGRATED CIRCUITS; DESIGN; TOPOLOGY;

CELLS;

EID: 79959246336     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISQED.2011.5770761     Document Type: Conference Paper

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