Anodic repassivation of low energy Au-implanted ultra-thin anodic Al 2O 3

Physica Status Solidi (A) Applications and Materials Science

Volumn 208, Issue 6, 2011, Pages 1270-1274

  Mardare, Andrei Ionut ^a   Melnikov, Alexander ^b   Wieck, Andreas Dirk ^b   Hassel, Achim Walter ^a  

^a JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

^b RUHR UNIVERSITY BOCHUM   (Germany)

Author keywords

anodic oxide film; ion implantation; scanning droplet cell

Indexed keywords

ANODIC ALUMINA; ANODIC OXIDE FILM; BAND GAP ENGINEERING; DIFFERENT GEOMETRY; DOPING ATOMS; GEOMETRICAL POSITIONS; GOLD NANOCLUSTER; IMPLANTATION PARAMETERS; LOW ENERGIES; NEAR-SURFACE; OXIDE-METAL INTERFACE; RE-PASSIVATION; REPASSIVATION POTENTIAL; SCANNING DROPLET CELL; ULTRA-THIN;

ALUMINUM SHEET; ATOMS; GOLD; ION IMPLANTATION; OXIDE FILMS; PASSIVATION; SEMICONDUCTOR DOPING;

ANODIC OXIDATION;

EID: 79959220717     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.201001212     Document Type: Article

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