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Journal of Applied Physics

Volumn 109, Issue 10, 2011, Pages

The dependence of barrier heights of a-C: Fe/n-Si heterojunctions on film-depositing temperatures

(5) Wan, Caihua a Zhang, Xiaozhong a Vanacken, Johan b Gao, Xili a Moshchalkov, Victor V b

a TSINGHUA UNIVERSITY (China)

b UNIVERSITY OF LEUVEN (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

A-C FILM; BAND GAPS; BARRIER HEIGHTS; ELECTRICAL METHODS; FE FILMS; INTERFACE ENERGY; ORDERING DEGREE; PULSE LASER DEPOSITION;

AMORPHOUS CARBON; AMORPHOUS SILICON; BAND STRUCTURE; CARBON FILMS; ELECTRON ENERGY LOSS SPECTROSCOPY; ENERGY DISSIPATION; HETEROJUNCTIONS; RAMAN SPECTROSCOPY;

AMORPHOUS FILMS;

EID: 79958848035 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3587157 Document Type: Conference Paper

Times cited : (3)

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