Photoconductivity of iron doped amorphous carbon films on n-type silicon substrates

Applied Physics Letters

Volumn 95, Issue 2, 2009, Pages

  Wan, Caihua ^a   Zhang, Xiaozhong ^a   Zhang, Xin ^a   Gao, Xili ^a   Tan, Xinyu ^a  

^a TSINGHUA UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

A-C FILM; CURRENT IN PLANES; FE FILMS; FE-DOPED; IV CHARACTERISTICS; N TYPE SILICON; P TYPE SEMICONDUCTOR; P-N JUNCTION; P-TYPE; PULSE LASER DEPOSITION; ROOM TEMPERATURE; SATURATION CURRENT; SI SUBSTRATES; WHITE-LIGHT ILLUMINATION;

AMORPHOUS CARBON; AMORPHOUS FILMS; AMORPHOUS SILICON; CARBON FILMS; PHOTOCONDUCTIVITY; PULSED LASER APPLICATIONS; SEMICONDUCTOR JUNCTIONS;

SUBSTRATES;

EID: 67650766642     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3177190     Document Type: Article

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