Advanced imaging with 1.35 NA immersion systems for volume production

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7640, Issue , 2010, Pages

  Bouchoms, Igor ^a   Mulkens, Jan ^a   De Putter, Sander ^a   Gunter, Pieter ^a   De Graaf, Roelof ^a   Beems, Marcel ^a   Verdurmen, Erwin ^a   Jasper, Hans ^a   Dieckmann, Nils ^b   Bornebroek, Frank ^a  

^a ASML   (Netherlands)

^b CARL ZEISS SMT AG   (Germany)

Author keywords

CD control; Defects; Exposure systems; Immersion lithography; low k1; Overlay

Indexed keywords

DEFECTS; ROBUST CONTROL; SEMICONDUCTOR DEVICE MANUFACTURE;

CD CONTROL; EXPOSURE SYSTEM; IMMERSION LITHOGRAPHY; LOW K1; OVERLAY;

LITHOGRAPHY;

EID: 79958819139     PISSN: 0277786X     EISSN: 1996756X     Source Type: Conference Proceeding    
DOI: 10.1117/12.845597     Document Type: Conference Paper

References (6)

1. Customer data as collected by ASML (2010)
2. Tom Castenmiller et. al, Towards ultimate optical lithography with NXT:1950i dual stage immersion platform, Proc SPIE , to be published (2010)
3. Alexander Straaijer, " Formulas for lithographic parameters when printing isolated and dense features", J. Microlith., Microfab., Microsyst. Okt-Dec 2005, vol 4
4. Igor Bouchoms et. al., "Extending single-exposure patterning towards 38-nm half pitch using 1.35 NA immersion", Proc SPIE 7274 (2009)
5. Jos de Klerk et. al., "Performance of a 1.35 NA ArF immersion lithography system for 40-nm applications XT:1900i System Performance", Proc SPIE 6520 (2007)
6. Jan Mulkens et. al. "Latest Developments on Immersion Exposure Systems", Proc. SPIE 6924 (2008)