Extending Single-Exposure Patterning Towards 38-nm Half-Pitch Using 1.35 NA Immersion

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7274, Issue , 2009, Pages

  Bouchoms, Igor ^a   Engelen, Andre ^a   Mulkens, Jan ^a   Boom, Herman ^a   Moerman, Richard ^a   Liebregts, Paul ^a   De Graaf, Roelof ^a   Van Veen, Marieke ^a   Thomassen, Patrick ^a   Emer, Wolfgang ^b   Sperling, Frank ^a  

^a ASML   (Netherlands)

^b CARL ZEISS SMT AG   (Germany)

Author keywords

38 nm; CD control; Defects; Exposure systems; Immersion lithography; Low k1; Overlay

Indexed keywords

38-NM; CD CONTROL; EXPOSURE SYSTEMS; IMMERSION LITHOGRAPHY; LOW K1; OVERLAY;

BAR CODES; DATA STORAGE EQUIPMENT; DEFECTS;

PHOTOLITHOGRAPHY;

EID: 65849436689     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.813649     Document Type: Conference Paper

References (7)

1. Bob Streefkerk, et.al, "Extending Optical Lithography with Immersion", Proc. SPIE 5377, 285 (2004)
2. Jos de Klerk, et.al, "Performance of a 1.35NA ArF immersion lithography system for 40nm applications XT:1900i system Performance", Proc. SPIE6520 (2007)
3. Sematech Lithoforum 2008, survey result
4. Jo Finders et.al., "Double patterning for 32-nm and below: an update", Proc. SPIE 6924-07 (2008)
5. Fred de Jong et.al. "Enabling the lithography roadmap: an immersion tool based on a novel stage-positioning system ", SPIE 2009 7274-7364
6. Jan Mulkens et.al."Latest Developments on Immersion Exposure Systems ", Proc. SPIE 6924 (2008)
7. Andre Engelen et.al. "Photolithography usingfreeform sources on high-NA immersion systems ", SPIE 2009 7274-7362