Annealing effect on the photoluminescence properties of ZnO nanorod array prepared by a PLD-assistant wet chemical method

Materials Characterization

Volumn 61, Issue 11, 2010, Pages 1239-1244

  Wei, Sufeng ^a   Lian, Jianshe ^b   Wu, Hua ^a  

^a CHANGCHUN UNIVERSITY OF TECHNOLOGY   (China)

^b Jilin University   (China)

Author keywords

Annealing effect; Photoluminescence; X ray photoelectron spectroscopy; ZnO nanorod array

Indexed keywords

ANNEALING EFFECTS; ANNEALING TEMPERATURES; GLASS SUBSTRATES; LUMINESCENCE CHARACTERISTICS; NANOROD ARRAYS; PHOTOLUMINESCENCE INTENSITIES; PHOTOLUMINESCENCE PROPERTIES; PHOTOLUMINESCENCE SPECTRUM; SEED LAYER; ULTRAVIOLET EMISSION; VISIBLE EMISSIONS; VISIBLE LIGHT EMISSION; WELL-ALIGNED; WET-CHEMICAL METHOD; ZNO NANOROD ARRAYS; ZNO THIN FILM;

ANNEALING; DEPOSITION; ELECTRONS; FILM PREPARATION; GLASS LASERS; PHOTOELECTRICITY; PHOTOLUMINESCENCE; PHOTONS; PULSED LASER DEPOSITION; SUBSTRATES; X RAY PHOTOELECTRON SPECTROSCOPY; X RAYS; ZINC OXIDE;

NANORODS;

EID: 77957992618     PISSN: 10445803     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matchar.2010.08.002     Document Type: Article

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