메뉴 건너뛰기




Volumn 58, Issue 5, 2011, Pages 299-303

An average-performance-oriented subthreshold processor self-timed by memory read completion

Author keywords

Low power VLSI; self timed processor; subthreshold circuit

Indexed keywords

LOW POWER ELECTRONICS; METALS; MOS DEVICES; OXIDE SEMICONDUCTORS;

EID: 79958768806     PISSN: 15497747     EISSN: 15583791     Source Type: Journal    
DOI: 10.1109/TCSII.2011.2149110     Document Type: Article
Times cited : (8)

References (9)
  • 4
    • 76849102941 scopus 로고    scopus 로고
    • Exploring asynchronous design techniques for process-tolerant and energy-efficient subthreshold operation
    • Feb
    • I. J. Chang, S. P. Park, and K. Roy, "Exploring asynchronous design techniques for process-tolerant and energy-efficient subthreshold operation", IEEE J. Solid-State Circuits, vol. 45, no. 2, pp. 401-410, Feb. 2010.
    • (2010) IEEE J. Solid-state Circuits , vol.45 , Issue.2 , pp. 401-410
    • Chang, I.J.1    Park, S.P.2    Roy, K.3
  • 5
    • 0034289978 scopus 로고    scopus 로고
    • Interfacing synchronous and asynchronous modules within a high-speed pipeline
    • DOI 10.1109/92.894162
    • A. Sjogren and C. J. Myers, "Interfacing synchronous and asynchronous modules within a high-speed pipeline", IEEE Trans. Very Large Scale Integr. (VLSI) Syst., vol. 8, no. 5, pp. 573-583, Oct. 2000. (Pubitemid 32255534)
    • (2000) IEEE Transactions on Very Large Scale Integration (VLSI) Systems , vol.8 , Issue.5 , pp. 573-583
    • Sjogren, A.E.1    Myers, C.J.2
  • 7
    • 77957893965 scopus 로고    scopus 로고
    • Alpha-particleinduced soft errors and multiple cell upsets in 65-nm 10T subthreshold SRAM
    • H. Fuketa, Y. Mitsuyama, M. Hashimoto, and T. Onoye, "Alpha- particleinduced soft errors and multiple cell upsets in 65-nm 10T subthreshold SRAM", in Proc. Int. Reliab. Phys. Symp., 2010, pp. 213-217.
    • (2010) Proc. Int. Reliab. Phys. Symp. , pp. 213-217
    • Fuketa, H.1    Mitsuyama, Y.2    Hashimoto, M.3    Onoye, T.4
  • 8
    • 59349118349 scopus 로고    scopus 로고
    • A 32 kb 10T subthreshold SRAM array with bit-interleaving and differential read scheme in 90 nm CMOS
    • Feb
    • I. J. Chang, J. J. Kim, S. P. Park, and K. Roy, "A 32 kb 10T subthreshold SRAM array with bit-interleaving and differential read scheme in 90 nm CMOS", IEEE J. Solid-State Circuits, vol. 44, no. 2, pp. 650-658, Feb. 2009.
    • (2009) IEEE J. Solid-state Circuits , vol.44 , Issue.2 , pp. 650-658
    • Chang, I.J.1    Kim, J.J.2    Park, S.P.3    Roy, K.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.