Effects of PbO content on the dielectric properties and energy storage performance of (Pb0.97La0.02)(Zr0.97Ti 0.03)O3 antiferroelectric thin films

Journal of the American Ceramic Society

Volumn 94, Issue 6, 2011, Pages 1647-1650

  Hao, Xihong ^a   Zhou, Jing ^b   An, Shengli ^a  

^a INNER MONGOLIA UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^b WUHAN UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIFERROELECTRIC THIN FILMS; ANTIFERROELECTRICS; DIELECTRIC MEASUREMENTS; ENERGY STORAGE DENSITY; MIXED ORIENTATIONS; PHASE TRANSFORMATION; PREFERRED ORIENTATIONS; PT(111); STORAGE PERFORMANCE;

ANTIFERROELECTRICITY; ENERGY STORAGE; FLYWHEELS; LEAD; LEAD OXIDE; PLATINUM; SILICON COMPOUNDS; SOL-GEL PROCESS; TITANIUM DIOXIDE; X RAY DIFFRACTION; ZIRCONIUM;

THIN FILMS;

EID: 79958138393     PISSN: 00027820     EISSN: 15512916     Source Type: Journal    
DOI: 10.1111/j.1551-2916.2011.04460.x     Document Type: Article

References (16)

1. N. H. Fletcher, A. D. Hilton, and, B. W. Ricketts, " Optimization of Energy Storage Density in Ceramic Capacitors," J. Phys. D: Appl. Phys., 29, 253-8 (1996). (Pubitemid 126548158)
2. Q. Chen, Y. Wang, X. Zhou, Q. M. Zhang, and, S. Zhang, " High Field Tunneling as a Limiting Factor of Maximum Energy Density in Dielectric Energy Storage Capacitors," Appl. Phys. Lett., 92, 142909, 3pp (2008).
3. 12 Thin Films," J. Appl. Phys., 108, 074103, 5pp (2010).
4. B. Chu, X. Zhou, K. Ren, B. Neese, M. Lin, Q. Wang, F. Bauer, and, Q. M. Zhang, " A Dielectric Polymer with High Electric Energy Density and Fast Discharge Speed," Science, 313, 334-6 (2006). (Pubitemid 44480954)
5. 3 Glass," J. Am. Ceram. Soc., 92, 1871-3 (2009).
6. K. Singh, " Antiferroelectric Lead Zirconate. A Material for Energy Storage," Ferroelectrics, 94, 433 (1989).
7. I. Burn, and, D. M. Smyth, " Energy Storage in Ceramic Dielectrics," J. Mater. Sci., 7, 339-43 (1972).
8. 3 Thin Films," Appl. Phys. Lett., 92, 192901, 3pp (2008).
9. J. Sigman, G. L. Brennecka, P. G. Clem, and, B. A. Tuttle, " Fabrication of Perovskite-Based High-Value Integrated Capacitors by Chemical Solution Depositions," J. Am. Ceram. Soc., 91, 1851-7 (2008).
10. 3 Antiferroelectric Thin Films," Appl. Phys. Lett., 97, 142902, 3pp (2010).
11. 3 Antiferroelectric Thin Films," J. Am. Ceram. Soc., 92, 1133-5 (2009).
12. 3 Films-on-Foil Capacitors," J. Mater. Res., 24, 2993-6 (2009).
13. 3 (PLZST) Antiferroelectric Thin Films by Modified Sol-Gel Process Using A Novel Tin Source, Dibutyloxide of Tin," J. Sol-Gel Sci. Technol., 42, 365-368 (2007). (Pubitemid 46645826)
14. 3 Thin Films: PbO Seeding Role in the Formation of Preferential Orientation," Acta Mater., 52, 2787-93 (2004).
15. 3 Antiferroelectric Films," J. Sol-Gel Sci. Technol., 53, 366-71 (2010).
16. 3 Thin Films by a Two-Step Annealing Process," Appl. Phys. Lett., 77, 2584-6 (2000).