Enhancement of the thermoelectric performance of β-Zn 4Sb3 by in situ nanostructures and minute Cd-doping

Acta Materialia

Volumn 59, Issue 12, 2011, Pages 4805-4817

  Wang, Shanyu ^a   Li, Han ^a   Qi, Dekui ^a   Xie, Wenjie ^a   Tang, Xinfeng ^a  

^a WUHAN UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

Electrical properties; Melt spinning; Nanostructure; Semiconductor; Thermal conductivity

Indexed keywords

BULK MATERIALS; DIMENSIONLESS FIGURE OF MERIT; ELECTRICAL CONDUCTIVITY; HEAT CYCLE; IN-SITU; IN-VACUUM; LATTICE THERMAL CONDUCTIVITY; LOW TEMPERATURES; MAXIMUM VALUES; MULTISCALES; NANODOTS; NON EQUILIBRIUM; SEMICONDUCTOR; SUBSTANTIAL REDUCTION; SUPPRESSING EFFECTS; THERMOELECTRIC PERFORMANCE;

ANTIMONY COMPOUNDS; ELECTRIC CONDUCTIVITY; MELT SPINNING; NANOSTRUCTURES; PHASE TRANSITIONS; SEMICONDUCTOR DOPING; SPARK PLASMA SINTERING; THERMAL CONDUCTIVITY; THERMODYNAMIC STABILITY; THERMOELECTRIC POWER; ZINC;

CADMIUM COMPOUNDS;

EID: 79958132042     PISSN: 13596454     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.actamat.2011.04.023     Document Type: Article

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