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Solid State Sciences

Volumn 12, Issue 8, 2010, Pages 1511-1515

Effects of silicon addition on thermoelectric properties of bulk Zn 4Sb3 at low-temperatures

(7) Pan, L a Qin, X Y a Xin, H X a Song, C J a Wang, Q Q a Sun, J H a Sun, R R a

a INSTITUTE OF SOLID STATE PHYSICS (China)

Author keywords

Hot pressing; Semiconductors; Thermoelectric

Indexed keywords

ELECTRICAL RESISTIVITY; FIGURE OF MERIT; FIRST-PRINCIPLES CALCULATION; LOW TEMPERATURES; SI ATOMS; SI CONTENT; SILICON ADDITIONS; THERMOELECTRIC PERFORMANCE; THERMOELECTRIC PROPERTIES; ZN ATOMS;

ATOMS; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; HOT PRESSING; THERMAL CONDUCTIVITY; THERMOANALYSIS; THERMOELECTRIC EQUIPMENT; THERMOELECTRICITY; ZINC;

SILICON;

EID: 77955414440 PISSN: 12932558 EISSN: None Source Type: Journal
DOI: 10.1016/j.solidstatesciences.2010.06.005 Document Type: Article

Times cited : (9)

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