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Volumn 922, Issue , 2007, Pages 63-66

Low frequency noise of ultrathin oxide MOSFETs using Green's function approach

Author keywords

flat band voltage power spectral density; Green's function; thin oxide

Indexed keywords


EID: 78650575872     PISSN: 0094243X     EISSN: 15517616     Source Type: Conference Proceeding    
DOI: 10.1063/1.2759637     Document Type: Conference Paper
Times cited : (2)

References (6)
  • 2
    • 0015299686 scopus 로고
    • Theory and experiments on surface 1/f noise
    • Feb
    • Horng-Sen Fu; Chih-Tang Sah, "Theory and experiments on surface 1/f noise," Electron Devices, IEEE Transactions on , vol.19, no.2pp. 273-285, Feb 1972.
    • (1972) Electron Devices, IEEE Transactions on , vol.19 , Issue.2 , pp. 273-285
    • Fu, H.-S.1    Sah, C.-T.2
  • 3
    • 0025398785 scopus 로고
    • A unified model for the flicker noise in metal-oxide-semiconductor field-effect transistors
    • Mar
    • Hung, K.K.; Ko, P.K.; Hu, C; Cheng, Y.C., "A unified model for the flicker noise in metal-oxide-semiconductor field-effect transistors," Electron Devices, IEEE Transactions on , vol.37, no.3pp.654-665, Mar 1990.
    • (1990) Electron Devices, IEEE Transactions on , vol.37 , Issue.3 , pp. 654-665
    • Hung, K.K.1    Ko, P.K.2    Hu, C.3    Cheng, Y.C.4
  • 4
    • 0023432341 scopus 로고
    • A simple derivation of Reimbold's drain current spectrum formula for flicker noise in MOSFETs
    • Oct.
    • G. Ghibaudo, "A simple derivation of Reimbold's drain current spectrum formula for flicker noise in MOSFETs," Solid-State Electronics,vol. 30, no. 10, pp. 1037-1038, Oct. 1987.
    • (1987) Solid-State Electronics , vol.30 , Issue.10 , pp. 1037-1038
    • Ghibaudo, G.1
  • 6
    • 0038575148 scopus 로고    scopus 로고
    • Simulation of trapping noise in submicron n-channel MOSFETs
    • Fan-Chi Hou; Gijs Bosman; Mark E, "Simulation of trapping noise in submicron n-channel MOSFETs, Electron Devices, IEEE Trans, on, Vol.50, Iss.3, pp :846-852.
    • Electron Devices, IEEE Trans, on , vol.50 , Issue.3 , pp. 846-852
    • Hou, F.-C.1    Bosman, G.2    Mark, E.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.