Electrical spin injection in InAs quantum dots at room temperature and adjustment of the emission wavelength for spintronic applications

Journal of Crystal Growth

Volumn 323, Issue 1, 2011, Pages 376-379

  Ludwig, A ^a   Roescu, R ^a   Rai, A K ^a   Trunov, K ^a   Stromberg, F ^b   Li, M ^a   Soldat, H ^a   Ebbing, A ^a   Gerhardt, N C ^a   Hofmann, M R ^a   Wende, H ^b   Keune, W ^b   Reuter, D ^a   Wieck, A D ^a  

^a RUHR UNIVERSITY BOCHUM   (Germany)

^b UNIVERSITY OF DUISBURG ESSEN   (Germany)

Author keywords

Gallium compounds; InAs quantum dots; Light emitting diodes; Magnetic materials; Molecular beam epitaxy; Semiconducting IIIV materials

Indexed keywords

APPLIED MAGNETIC FIELDS; BLUE SHIFT; ELECTRICAL SPIN INJECTION; EMISSION WAVELENGTH; HIGHLY SENSITIVE; INAS QUANTUM DOTS; OUT-OF-PLANE ANISOTROPY; P-TYPE GAAS; QUANTUM INFORMATION; ROOM TEMPERATURE; SEMI CONDUCTING III-V MATERIALS; SPINTRONIC APPLICATIONS;

GALLIUM ALLOYS; GALLIUM COMPOUNDS; INDIUM ARSENIDE; LIGHT; LIGHT EMISSION; LIGHT EMITTING DIODES; MAGNETIC FIELDS; MAGNETIC MATERIALS; MAGNETIC PROPERTIES; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; QUANTUM OPTICS; QUANTUM THEORY; SEMICONDUCTING INDIUM; WATER ANALYSIS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 79958020342     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2010.09.087     Document Type: Article

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