Capacitance-voltage spectroscopy of post-growth annealed InAs quantum dots

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 40, Issue 6, 2008, Pages 1961-1964

  Reuter, Dirk ^a   Roescu, Razvan ^a   Mehta, Minisha ^a   Richter, Mirja ^a   Wieck, A D ^a  

^a RUHR UNIVERSITY BOCHUM   (Germany)

Author keywords

Capacitance voltage spectroscopy; InAs; Quantum dots; Rapid thermal annealing

Indexed keywords

CAPACITANCE; CURRENT VOLTAGE CHARACTERISTICS; INDIUM ARSENIDE; RAPID THERMAL ANNEALING; SEMICONDUCTOR GROWTH;

CAPACITANCE-VOLTAGE SPECTROSCOPY; COULOMB ENERGY; QUANTUM DOT EMISSIONS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 41349109512     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2007.09.061     Document Type: Article

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