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Journal of Crystal Growth

Volumn 323, Issue 1, 2011, Pages 68-71

Role of strain in growth kinetics of AlGaN layers during plasma-assisted molecular beam epitaxy

(6) Mizerov, A M a Jmerik, V N a Yagovkina, M A a Troshkov, S I a Kopev, P S a Ivanov, S V a

a IOFFE INSTITUTE (Russian Federation)

Author keywords

Molecular beam epitaxy; Nitrides; Semiconducting IIIV materials

Indexed keywords

ACTIVATED NITROGEN; AL-CONTENT; ALGAN LAYERS; COMPARATIVE STUDIES; ELASTIC STRESS; FLUX RATIO; GA FLUX; GROUP III; GROWTH CONDITIONS; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; PRECISE CONTROL; SEMI CONDUCTING III-V MATERIALS; STRAIN EFFECT;

ALUMINUM; EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MORPHOLOGY; NITRIDES; NITROGEN PLASMA; SURFACE MORPHOLOGY; TWO DIMENSIONAL;

GROWTH KINETICS;

EID: 79958006836 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2010.11.136 Document Type: Article

Times cited : (8)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.