|
Volumn 323, Issue 1, 2011, Pages 466-469
|
The transition mechanisms of type-II GaSb/GaAs quantum-dot infrared light-emitting diodes
|
Author keywords
Antimonides; Light emitting diodes
|
Indexed keywords
ANTIMONIDES;
BLUE SHIFT;
ENHANCED LUMINESCENCE;
GAAS;
GASB/GAAS;
INFRARED LIGHT-EMITTING DIODES;
INJECTION CURRENTS;
OPERATION MECHANISM;
QUANTUM DOTS;
RED SHIFT;
ROOM TEMPERATURE;
TRANSITION MECHANISM;
DIODES;
ELECTROLUMINESCENCE;
GALLIUM ALLOYS;
LIGHT;
LIGHT EMISSION;
SEMICONDUCTOR QUANTUM DOTS;
LIGHT EMITTING DIODES;
|
EID: 79957997654
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jcrysgro.2010.10.109 Document Type: Article |
Times cited : (11)
|
References (11)
|