Photoluminescence decay time measurements from self-organized InAs/GaAs quantum dots grown on misoriented substrates

Nanotechnology

Volumn 12, Issue 4, 2001, Pages 512-514

  Shkolnik, A S ^a   Dogonkin, E B ^a   Evtikhiev, V P ^a   Kotelnikov, E Yu ^a   Kudryashov, I V ^a   Talalaev, V G ^b   Novikov, B V ^b   Tomm, J W ^c   Gobsch, G ^d  

^a IOFFE INSTITUTE   (Russian Federation)

^b ST PETERSBURG STATE UNIVERSITY   (Russian Federation)

^c MAX BORN INSTITUT   (Germany)

^d ILMENAU UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

GROUND STATE; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SUBSTRATES;

PHOTOLUMINESCENCE DECAY TIME;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0035676032     PISSN: 09574484     EISSN: None     Source Type: Journal    
DOI: 10.1088/0957-4484/12/4/327     Document Type: Conference Paper

References (9)