The fabrication and ultraviolet detecting properties of ZnMgO-based thin film transistor by laser molecular beam epitaxy

Semiconductor Science and Technology

Volumn 25, Issue 4, 2010, Pages

  Zhang, Xin'An ^a   Zhang, Jingwen ^b   Zhang, Weifeng ^a   Hou, Xun ^a,b  

^a HENAN UNIVERSITY   (China)

^b XI'AN JIAOTONG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ACCUMULATION MODES; CHANNEL LAYERS; CHANNEL MOBILITY; DARK CURRENT RATIO; DEPLETION MODES; ELECTRICAL PROPERTY; GATE BIAS; GATE THIN FILMS; LASER MOLECULAR BEAM EPITAXY; ON/OFF RATIO; P-TYPE SILICON; PHOTO INTENSITY; THERMALLY OXIDIZED; TRANSIENT RESPONSE; ULTRA-VIOLET LIGHT; ULTRAVIOLET ILLUMINATION; UV SENSOR; ZNMGO;

CRYSTAL GROWTH; ELECTRIC PROPERTIES; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR QUANTUM WIRES; SENSORS; THIN FILM TRANSISTORS; THIN FILMS; ULTRAVIOLET LASERS; ULTRAVIOLET RADIATION;

DRAIN CURRENT;

EID: 77951083105     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/25/4/045026     Document Type: Article

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