Fabrication of high-aspect-ratio nanohole arrays on GaN surface by using wet-chemical-assisted femtosecond laser ablation

Journal of Laser Micro Nanoengineering

Volumn 6, Issue 1, 2011, Pages 15-19

  Nakashima, Seisuke ^a   Sugioka, Koji ^a   Ito, Takuma ^a,b   Takai, Hiroshi ^b   Midorikawa, Katsumi ^a  

^a RIKEN   (Japan)

^b TOKYO DENKI UNIVERSITY   (Japan)

Author keywords

Femtosecond laser ablation; Gallium nitride; High aspect ratio nanohole; Nanofabrication; Wet chemical process

Indexed keywords

ABLATION PROCESS; BLUE LIGHT-EMITTING; DEPTH OF FOCUS; FEMTOSECOND LASER ABLATION; FEMTOSECOND LASER PULSE; GAN SUBSTRATE; HCL SOLUTION; HIGH ASPECT RATIO; LASER IRRADIATIONS; MICROBUBBLES; MULTI-SCAN; NANO-SIZED; NANOFABRICATION; NANOHOLE ARRAYS; NANOHOLES; PERIODIC ARRAYS; PULSE NUMBER; SINGLE PULSE; TWO-DIMENSIONAL PHOTONIC CRYSTALS; WET CHEMICAL PROCESS;

ABLATION; FABRICATION; GALLIUM NITRIDE; HYDROCHLORIC ACID; IRRADIATION; LASER ABLATION; LASER APPLICATIONS; LASER CHEMISTRY; ORGANIC LIGHT EMITTING DIODES (OLED); ORGANIC POLYMERS; PHOTONIC CRYSTALS; REFRACTIVE INDEX; ULTRAFAST LASERS; ULTRASHORT PULSES;

ASPECT RATIO;

EID: 79957975270     PISSN: None     EISSN: 18800688     Source Type: Journal    
DOI: 10.2961/jlmn.2011.01.0004     Document Type: Article

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