LWR improvement in EUV resist process

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7969, Issue , 2011, Pages

  Koh, Chawon ^a   Kim, Hyun Woo ^a   Kim, Sumin ^a   Na, Hai Sub ^a   Park, Chang Min ^a   Park, Cheolhong ^a   Cho, Kyoung Yong ^b  

^a SAMSUNG Electronics   (South Korea)

^b SEMATECH   (United States)

Author keywords

EUV rinse material; Extreme ultraviolet lithography; Implant process; LWR(Line width roughness)

Indexed keywords

AFTER-DEVELOPMENT INSPECTIONS; CRITICAL DIMENSION; DEGREE OF CHANGE; EUV RESISTS; EUV RINSE MATERIAL; EXTREME ULTRAVIOLET; IMPLANT PROCESS; LINEWIDTH ROUGHNESS; LOW FREQUENCY; LWR(LINE WIDTH ROUGHNESS); PATTERN SIZE; PATTERN TRANSFERS; PROCESS CONDITION; PROCESS TECHNIQUES; REAL PROCESS; THROUGH PITCH;

EXTREME ULTRAVIOLET LITHOGRAPHY; LITHOGRAPHY;

ROUGHNESS MEASUREMENT;

EID: 79957945020     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.879334     Document Type: Conference Paper

References (9)

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