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Volumn 7969, Issue , 2011, Pages

Overlay progress in EUV lithography towards adoption for manufacturing

Author keywords

distortion; electrostatic chuck; EUV; exposure tool; flatness; overlay; thermal; vacuum

Indexed keywords

DISTORTION; ELECTROSTATIC CHUCK; EUV; EXPOSURE TOOL; FLATNESS; OVERLAY; THERMAL;

EID: 79957933512     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.881088     Document Type: Conference Paper
Times cited : (9)

References (11)
  • 1
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    • Performance of the ASML EUV Alpha Demo Tool
    • J.V. Hermans et al, "Performance of the ASML EUV Alpha Demo Tool", Proc. SPIE 7969 (2010)
    • (2010) Proc. SPIE , pp. 7969
    • Hermans, J.V.1
  • 2
    • 67149119592 scopus 로고    scopus 로고
    • Stability and imaging of the ASML EUV Alpha Demo Tool
    • J.V. Hermans et al, "Stability and imaging of the ASML EUV Alpha Demo Tool", Proc. SPIE 7271 (2009)
    • (2009) Proc. SPIE , pp. 7271
    • Hermans, J.V.1
  • 3
    • 80055087476 scopus 로고    scopus 로고
    • Predicting distortions and overlay errors due to wafer deformation during chucking on lithography scanners
    • K. Turner et al, "Predicting distortions and overlay errors due to wafer deformation during chucking on lithography scanners", J. Micro/Nanolith. MEMS MOEMS, Vol. 8, No. 4, pp. 043015-1-8, 2009
    • (2009) J. Micro/Nanolith. MEMS MOEMS , vol.8 , Issue.4
    • Turner, K.1
  • 4
    • 79957928903 scopus 로고    scopus 로고
    • Overlay improvement by zone alignment strategy
    • C.Y. Huang et al, "Overlay improvement by zone alignment strategy", Proc. SPIE Vol. 6922 (2008)
    • (2008) Proc. SPIE , vol.6922
    • Huang, C.Y.1
  • 5
    • 0034316074 scopus 로고    scopus 로고
    • Reticle's Contribution to Critical Dimension Control and Overlay in Extreme-Ultraviolet Lithography
    • H. Meiling et al, "Reticle's Contribution to Critical Dimension Control and Overlay in Extreme-Ultraviolet Lithography," Journal of Vacuum Science and Technology B, Vol. 18, No. 6, pp. 2921-2925, 2000
    • (2000) Journal of Vacuum Science and Technology B , vol.18 , Issue.6 , pp. 2921-2925
    • Meiling, H.1
  • 6
    • 35148866644 scopus 로고    scopus 로고
    • Rigorous model for registration error due to EUV reticle non-flatness and a proposed disposition and compensation technique
    • B. Lieberman, "Rigorous model for registration error due to EUV reticle non-flatness and a proposed disposition and compensation technique", Proc. SPIE 6517 (2007)
    • (2007) Proc. SPIE , pp. 6517
    • Lieberman, B.1
  • 8
    • 33745602194 scopus 로고    scopus 로고
    • EUV Mask and Chuck Analysis - Simulation and Experimentation
    • M. Nataraju et al, "EUV Mask and Chuck Analysis - Simulation and Experimentation", Proc. SPIE 6151 (2006)
    • (2006) Proc. SPIE , pp. 6151
    • Nataraju, M.1
  • 9
    • 67149090616 scopus 로고    scopus 로고
    • Compensation of overlay errors due to mask bending and non-flatness for EUV masks
    • M. Chandhok, "Compensation of overlay errors due to mask bending and non-flatness for EUV masks", Proc. SPIE 7271 (2009)
    • (2009) Proc. SPIE , pp. 7271
    • Chandhok, M.1
  • 10
    • 77953368894 scopus 로고    scopus 로고
    • A study of reticle non-flatness induced image placement error contributions in EUV lithography
    • S. Raghunathan, "A study of reticle non-flatness induced image placement error contributions in EUV lithography", Proc. SPIE 7636 (2010)
    • (2010) Proc. SPIE , pp. 7636
    • Raghunathan, S.1
  • 11
    • 80055083267 scopus 로고    scopus 로고
    • Analysis of Coulomb and Johnsen-Rahbek electrostatic chuck performance in the presense of particles for extreme ultraviolet lithography
    • M. R. Sogard et al, "Analysis of Coulomb and Johnsen-Rahbek electrostatic chuck performance in the presense of particles for extreme ultraviolet lithography", J. Micro/Nanolith. MEMS MOEMS, Vol. 8, No. 4, pp. 041506-1-9, 2009
    • (2009) J. Micro/Nanolith. MEMS MOEMS , vol.8 , Issue.4
    • Sogard, M.R.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.