Rigorous model for registration error due to EUV reticle non-flatness and a proposed disposition and compensation technique

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6517, Issue PART 1, 2007, Pages

  Lieberman, Barry ^a  

^a INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROSTATIC CHUCK; WAVELENGTH EXPOSURE SYSTEMS;

CLAMPING DEVICES; DEFECT DENSITY; ELECTROSTATICS; ERROR ANALYSIS; MASKS;

EXTREME ULTRAVIOLET LITHOGRAPHY;

EID: 35148866644     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.707136     Document Type: Conference Paper

References (13)

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3. H. Meiling, J. Benschop, E. Loopstra, J. E. v. d. Werf, and M. H. A. Leenders, "Reticle's contribution to critical dimension control and overlay in extreme-ultraviolet lithography " J. Vac. Sci. Technol. B vol. 18, pp. 2921-2925, 2000.
4. S. Yoshitake, S. Tamamushi, S. Mitsui, M. Ogasawara, T. S. T. Yamada, M. I. J. Butschke, M. Ferber, J. Bender, D. Adam, and K. D. Roth, "The study for image placement repeatability of EUV mask on the flat chuck" in EUVL Symposium Barcelona: Sematech, 2006.
5. P. Seidel, "LITH182S Substrates Development 2006 Year-End Report-Technology Transfer #06104800A-ENG" Sematech October 31, 2006.
6. P. Seidel, "LITH141 Extreme Ultraviolet (EUV) Mask Blank Supply Development Supplier Accomplishments (10/2005-06V2006)-Technology Transfer #06064765A-ENG "Sematech June 30, 2006.
7. I. Oroscz, "UTISZ-The Homepage of Istvan Oroscz: http://www.utisz.net/."
8. M. Nataraju, J. Sohn, A. Mikkelson, K. Turner, R. Engelstad, K. Orvek, and C. V. Peski, "Experimental Verification of Finite Element Model Prediction of EUVL Mask Flatness during Electrostatic Chucking " in EUVL Symposium Barcelona: Sematech, 2006.
9. "MetroPro Reference Guide OMP-0347J www.zvgo.com": Zygo Corporation, 2004.
10. C. J. Martin, A. R. Mikkelsona, R. O. Tejedaa, R. L. Engelstad, E. G. Lovell, K. L. Blaedel, and A. A. Claudet, "Mechanical modeling of the reticle and chuck for EUV lithography " in Proc. SPIE Emerging Lithographic Technologies VI, Santa Clara, 2002, pp. 194-204.
11. ij with all data points having equal weights.
12. The interferometer used to acquire the data in this example had a beam diameter of 6 inches. Therefore, the interferogram did not contain the total mask surface area. The analysis was performed on the largest square area contained in the beam. An interferometer with a 9-inch beam diameter is currently under development.
13. M. Vernon, "Holder For Carrying a Photolithography Mask In a Flattened Condition" United States Patent Pending, Sept 2006.