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Volumn 257, Issue 18, 2011, Pages 8062-8066

Analyses of surface temperatures on patterned sapphire substrate for the growth of GaN with metal organic chemical vapor deposition

Author keywords

GaN; MOCVD; Patterned sapphire substrate; Surface temperature

Indexed keywords

ATMOSPHERIC TEMPERATURE; CHEMICAL ANALYSIS; FINITE ELEMENT METHOD; GALLIUM NITRIDE; III-V SEMICONDUCTORS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; ORGANIC CHEMICALS; ORGANOMETALLICS; SAPPHIRE; SURFACE PROPERTIES; TEMPERATURE DISTRIBUTION;

EID: 79957909335     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2011.04.099     Document Type: Article
Times cited : (11)

References (16)
  • 16
    • 0346026783 scopus 로고    scopus 로고
    • Chemical engineering press house Beijing
    • C.L. Caws Matheson Gas Data Book 2003 Chemical engineering press house Beijing
    • (2003) Matheson Gas Data Book
    • Caws, C.L.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.