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Volumn 257, Issue 18, 2011, Pages 8062-8066
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Analyses of surface temperatures on patterned sapphire substrate for the growth of GaN with metal organic chemical vapor deposition
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Author keywords
GaN; MOCVD; Patterned sapphire substrate; Surface temperature
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Indexed keywords
ATMOSPHERIC TEMPERATURE;
CHEMICAL ANALYSIS;
FINITE ELEMENT METHOD;
GALLIUM NITRIDE;
III-V SEMICONDUCTORS;
METALLORGANIC CHEMICAL VAPOR DEPOSITION;
ORGANIC CHEMICALS;
ORGANOMETALLICS;
SAPPHIRE;
SURFACE PROPERTIES;
TEMPERATURE DISTRIBUTION;
GAN EPITAXIAL GROWTH;
HYDRODYNAMICS MODELING;
PATTERN TOPOGRAPHY;
PATTERNED SAPPHIRE SUBSTRATE;
SUBSTRATE THICKNESS;
SURFACE TEMPERATURE VARIATION;
SURFACE TEMPERATURES;
THERMAL DISTRIBUTIONS;
SURFACE TOPOGRAPHY;
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EID: 79957909335
PISSN: 01694332
EISSN: None
Source Type: Journal
DOI: 10.1016/j.apsusc.2011.04.099 Document Type: Article |
Times cited : (11)
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References (16)
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