Production of defects in hexagonal boron nitride monolayer under ion irradiation

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 269, Issue 11, 2011, Pages 1327-1331

  Lehtinen, O ^a   Dumur, E ^a   Kotakoski, J ^a   Krasheninnikov, A V ^a,b   Nordlund, K ^a   Keinonen, J ^a  

^a UNIVERSITY OF HELSINKI   (Finland)

^b AALTO UNIVERSITY   (Finland)

Author keywords

Defect; Hexagonal boron nitride monolayer; Ion irradiation

Indexed keywords

ATOMISTIC COMPUTER SIMULATION; HEXAGONAL BORON NITRIDE; HOSTILE ENVIRONMENTS; INCIDENCE ANGLES; ION ENERGIES; ION IRRADIATION; NITROGEN ATOM; NOBLE GAS IONS; SINGLE LAYER; SPUTTERING YIELDS;

COMPUTER SIMULATION; DEFECTS; INERT GASES; IONS; IRRADIATION; MONOLAYERS; NITRIDES;

BORON;

EID: 79957765083     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2010.11.027     Document Type: Article

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