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Volumn 25, Issue 3, 2009, Pages 421-432

Investigations of the surface chemical composition and atomic structure of ex-situ sulfur passivated Ge(100)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL ANALYSIS; PASSIVATION; SEMICONDUCTING GERMANIUM; SULFUR; SURFACE ANALYSIS;

EID: 77649198891     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3204433     Document Type: Conference Paper
Times cited : (7)

References (26)
  • 1
    • 51749095891 scopus 로고    scopus 로고
    • Advanced Gate Stacks for High-Mobility Semiconductors
    • Editors: K. Itoh, T. Lee et al, Berlin Heidelberg, Springer
    • A. Dimoulas, E. Gusev et al., in Advanced Gate Stacks for High-Mobility Semiconductors, Editors: K. Itoh, T. Lee et al.; Springer Series in Advanced Microelectronics, Berlin Heidelberg, Springer (2007).
    • (2007) Springer Series in Advanced Microelectronics
    • Dimoulas, A.1    Gusev, E.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.