Observation of hole accumulation at the interface of an undoped InGaN/GaN heterostructure

Applied Physics Letters

Volumn 95, Issue 1, 2009, Pages

  Chen, D J ^a   Xue, J J ^a   Liu, B ^a   Lu, H ^a   Xie, Z L ^a   Han, P ^a   Zhang, R ^a   Zheng, Y D ^a   Kong, Y C ^b   Zhou, J J ^b  

^a NANJING UNIVERSITY   (China)

^b NANJING ELECTRONIC DEVICES INSTITUTE   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ACCEPTOR TRAPS; BAND DIAGRAMS; C-V CURVE; CAPACITANCE VOLTAGE; HETERO INTERFACES; HETEROSTRUCTURE; HIGH FREQUENCY HF; HOLE ACCUMULATION; INGAN/GAN; MEASUREMENT FREQUENCY; MINORITY CARRIER; NEGATIVE BIAS; PIEZOELECTRIC POLARIZATIONS; THEORETICAL CALCULATIONS;

GALLIUM;

ELECTRIC POTENTIAL;

EID: 67650434376     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3176443     Document Type: Article

References (12)

1. J. J. Wierer, M. R. Krames, J. E. Epler, N. F. Gardner, M. G. Craford, J. R. Wendt, J. A. Simmons, and M. M. Sigalas, Appl. Phys. Lett. 0003-6951 84, 3885 (2004). 10.1063/1.1738934
2. N. F. Gardner, G. O. Muller, Y. C. Shen, G. Chen, S. Watanabe, W. Gotz, and M. R. Krames, Appl. Phys. Lett. 0003-6951 91, 243506 (2007). 10.1063/1.2807272
3. T. Makimoto, K. Kumakura, and N. Kobayashi, Appl. Phys. Lett. 0003-6951 83, 1035 (2003). 10.1063/1.1597989
4. T. Zimmermann, M. Neuburger, M. Kunze, I. Daumiller, A. Denisenko, A. Dadgar, A. Krost, and E. Kohn, IEEE Electron Device Lett. 0741-3106 25, 450 (2004). 10.1109/LED.2004.830285
5. H. Morkoc, A. D. Carlo, and R. Cingolani, Solid-State Electron. 0038-1101 46, 157 (2002). 10.1016/S0038-1101(01)00271-4
6. O. Ambacher, R. Dimitrov, M. Stutzmann, B. E. Foutz, M. J. Murphy, J. A. Smart, J. R. Shealy, N. G. Weimann, W. J. Schaff, and L. F. Eastman, Phys. Status Solidi B 0370-1972 216, 381 (1999). 10.1002/(SICI)1521-3951(199911)216: 1<381::AID-PSSB381>3.0.CO;2-O
7. C. Wood and D. Jena, Polarization Effects in Semiconductors (Springer, New York, 2008).
8. D. C. Look and R. J. Molnar, Appl. Phys. Lett. 0003-6951 70, 3377 (1997). 10.1063/1.119176
9. Y. C. Kong, Y. D. Zheng, C. H. Zhou, Y. Z. Deng, S. L. Gu, B. Shen, R. Zhang, R. L. Jiang, Y. Shi, and P. Han, Phys. Status Solidi B 0370-1972 241, 840 (2004). 10.1002/pssb.200301946
10. S. X. Li, K. M. Yu, J. Wu, R. E. Jones, W. Walukiewicz, J. W. Ager III, W. Shan, E. E. Haller H. Lu, and W. J. Schaff, Phys. Rev. B 0163-1829 71, 161201 (2005). 10.1103/PhysRevB.71.161201
11. T. Mattila and R. M. Nieminen, Phys. Rev. B 0163-1829 55, 9571 (1997). 10.1103/PhysRevB.55.9571
12. M. S. Jeong, Y. -W. Kim, E. -K. Suh, M. G. Cheong, C. S. Kim, C. -H. Hong, and H. J. Lee, Appl. Phys. Lett. 0003-6951 79, 3440 (2001). 10.1063/1.1420489