Anhydrous crystals of DNA bases are wide gap semiconductors

Journal of Chemical Physics

Volumn 134, Issue 17, 2011, Pages

  Maia Jr , F F ^a,b   Freire, V N ^b   Caetano, E W S ^c   Azevedo, D L ^d,e   Sales, F A M ^b,d   Albuquerque, E L ^d  

^a Universidade Federal Rural Do Semi rido   (Brazil)

^b FEDERAL UNIVERSITY OF CEARÁ   (Brazil)

^c Instituto Federal de Educacao   (Brazil)

^d FEDERAL UNIVERSITY OF RIO GRANDE DO NORTE   (Brazil)

^e FEDERAL UNIVERSITY OF MARANHÃO   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

ANHYDROUS CRYSTALS; BAND GAPS; BAND-GAP SEMICONDUCTORS; DEGREE OF ANISOTROPY; DIELECTRIC FUNCTIONS; DNA BASIS; EFFECTIVE MASS; EXPERIMENTAL MEASUREMENTS; HOLE TRANSPORTS; LOW TEMPERATURES; NUCLEOBASES; OPTICAL ABSORPTION; WIDE-GAP SEMICONDUCTOR;

DNA; ENERGY GAP; LOCAL DENSITY APPROXIMATION; OPTICAL PROPERTIES; POSITIVE IONS;

CRYSTALS;

ADENINE; CYTOSINE; DNA; GUANINE; THYMINE; WATER;

ARTICLE; CHEMICAL STRUCTURE; CHEMISTRY; CRYSTALLIZATION; SEMICONDUCTOR;

ADENINE; CRYSTALLIZATION; CYTOSINE; DNA; GUANINE; MODELS, MOLECULAR; SEMICONDUCTORS; THYMINE; WATER;

EID: 79957508851     PISSN: 00219606     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3584680     Document Type: Article

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