Temperature dependence of the absorption saturation relaxation time in light- and heavy-ion-irradiated bulk GaAs

Applied Physics Letters

Volumn 80, Issue 25, 2002, Pages 4711-4713

  Mangeney, J ^a   Stelmakh, N ^a   Aniel, F ^a   Boucaud, P ^a   Lourtioz, J M ^a  

^a UNIVERSITÉ PARIS SACLAY   (France)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECT LEVELS; GAAS; GAAS SATURABLE ABSORBER; RELAXATION MODELS; ROOM TEMPERATURE; TEMPERATURE DEPENDENCE;

GALLIUM ARSENIDE; HEAVY IONS; IRRADIATION; NEODYMIUM LASERS; SEMICONDUCTING GALLIUM;

RELAXATION TIME;

EID: 79956057757     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1489086     Document Type: Article

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