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Volumn 638, Issue , 2001, Pages F5141-F5146
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Charging effect in amorphous silicon quantum dots embedded in silicon nitride
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Author keywords
[No Author keywords available]
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Indexed keywords
AMORPHOUS SILICON;
BAND STRUCTURE;
CAPACITANCE;
ELECTRIC CHARGE;
ELECTRIC POTENTIAL;
ELECTRON TRANSITIONS;
PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;
SILICON NITRIDE;
SUBSTRATES;
CONDUCTION BAND;
SEMICONDUCTOR QUANTUM DOTS;
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EID: 0035557493
PISSN: 02729172
EISSN: None
Source Type: Journal
DOI: None Document Type: Article |
Times cited : (1)
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References (7)
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