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Volumn , Issue , 1998, Pages 190-191
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Optimized poly-Si1-xGex-gate technology for dual gate CMOS application
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Author keywords
[No Author keywords available]
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Indexed keywords
CMOS INTEGRATED CIRCUITS;
CURRENT VOLTAGE CHARACTERISTICS;
POLYCRYSTALLINE MATERIALS;
SEMICONDUCTING BORON;
SEMICONDUCTING SILICON COMPOUNDS;
POLY-GATE-DEPLETION EFFECTS (PDE);
SHORT-CHANNEL EFFECTS (SCE);
GATES (TRANSISTOR);
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EID: 0031623818
PISSN: 07431562
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
Times cited : (12)
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References (5)
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